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Experimental Physics III - Team Prof. Suter


Harpreet SinghSilicon-Carbide

Silicon vacancy centers in silicon carbide (SiC) are have attractive optical and spin properties. The vacancy formed by a missing silicon atom is tetragonally surrounded by four carbon atoms. We are focusing on the vacancy centers in ther 4H-SiC polytype. SiC has two inequivalent Si vacancies, V1 and V2, with cubic and hexagonal symmetry. The zero-phonon line of V1 is at 862 nm and that of V2 at 917 nm. The V2 type of vacancy shows optical alignment and carries a negative charge, trigonal pyramidal symmetry, and has a spin state S=3/2.