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Experimentelle Physik III - Arbeitsgruppe Prof. Suter

Silicon-Carbide
 

Properties of Si vacancies in SiC

Harpreet Singh In collaboration with Andrey N. Anisimov and Prof. Pavel G. Baranov, Ioffe Institute St-Petersburg

 
Silicon-carbide_2020


Silicon vacancy centers in silicon carbide (SiC) have attractive optical and spin properties.
The vacancy formed by a missing silicon atom is tetragonally surrounded by four carbon atoms.
We are focusing on the vacancy centers in the 6H-SiC polytype, where three inequivalent Si vacancies exist.
The so-called V1 and V3 vacancies are located at cubic sites, V2 at a hexagonal site.
In the negatively charged state, all centers have spin 3/2.
Laser irradiation of the sample generates strong spin polarisation and measurement of the photoluminescence
can be used for optically detected magnetic resonance.

 
 

Relevant Publications:

[1] Experimental characterization of spin-3/2 silicon vacancy centers in 6H-SiC
H. Singh, A. N. Anisimov, S. S. Nagalyuk, E. N. Mokhov, P. G. Baranov and D. Suter
Phys. Rev. B 101, 134110 (2020)